Subthreshold Degradation of 2D material Junctionless FETs -Impact of Fringe Field from Source/Drain Electrodes through Insulator-

摘要

We perform Technology computer-aided (TCAD) simulations for 2D material based Junctionless FET (JLFET) and investigate the effect of the fringe-field interaction between the source/drain (S/D) electrodes and the 2D channel. We find that subthreshold slope (SS) gets worse by the fringe-field interaction, and the degradation of the SS becomes serious when the work function difference becomes large. Interestingly, we also find that high drain voltage recovers the degradation of the SS.