A Compact Model of Subthreshold Current With Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs

摘要

In this paper, an analytical potential-based model in the subthreshold regime for short-channel junctionless cylindrical surrounding-gate MOSFETs is proposed as the source/drain depletion effect considered. The threshold voltage (), subthreshold slope, and drain-induced barrier lowering are also correspondingly derived, which give explicit explanations of the short-channel effects on junctionless MOSFETs in the subthreshold regime. The compact model is verified by the numerical simulation, and the results match well.