Effects of Aluminum Layer and Oxidation on TiO_2 based Bipolar Resistive Random Access Memory (RRAM)

摘要

The effects of Al layer and plasma oxidation amount on TiO_2 based bipolar RRAM cell are investigated, respectively. In Ir/Al/TiO_2/Ir structure, V_(RESEJ) is slightly lowered and the current ratio is increased. In case of plasma oxidation effect, the device which experienced short-time plasma oxidation has low set/reset voltages and high current and resistance ratios. These results are commonly thought to be induced by more oxygen vacancies.