LAYERED OXYGEN BARRIER ELECTRODES FOR RESISTIVE RANDOM ACCESS MEMORY (RRAM) DEVICES AND THEIR METHODS OF FABRICATION

摘要

A resistive random access memory (RRAM) device includes a bottom electrode disposed above a substrate, a top electrode disposed above the bottom electrode, an oxygen exchange layer disposed between the bottom electrode and the top electrode and a switching layer disposed between the bottom electrode and the top electrode. In an embodiment, the bottom or the top electrode includes at least two conductive layers, a first conductive layer and a second conductive layer disposed on the first conductive layer, where the first conductive layer has grain boundaries that are offset from grain boundaries of the second conductive layer.