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Resistive random access memory (RRAM) cell with a composite capping layer
Resistive random access memory (RRAM) cell with a composite capping layer
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机译:具有复合覆盖层的电阻式随机存取存储器(RRAM)单元
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摘要
A resistive random access memory (RRAM) cell with a composite capping layer is provided. A tantalum oxide based layer is arranged over a bottom electrode layer. The composite capping layer is arranged over and abutting the tantalum oxide based layer. The composite capping layer includes a first metal layer and a second metal layer overlying the first metal layer. The first metal layer is more reactive with the tantalum oxide based layer than the second metal layer. A top electrode layer is arranged over the composite capping layer. A method for manufacturing the RRAM cell is also provided.
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