Structure of V-defects in a-GaN films grown on r-sapphire substrate

摘要

The a-GaN films were successfully grown on the r-sapphire substrate by MOCVD method. The structure of V-defects was investigated by AFM and SEM. The dependence of V-defects density on growth temperature of a-GaN film at a constant hydrogen flow through a TEG source was studied. The influence of V/III ratio on V-defects structure was investigated. Methods of V-defects density minimisation were purposed.