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GAAS THIN FILM GROWN ON SI SUBSTRATE, AND PREPARATION METHOD FOR GAAS THIN FILM GROWN ON SI SUBSTRATE
GAAS THIN FILM GROWN ON SI SUBSTRATE, AND PREPARATION METHOD FOR GAAS THIN FILM GROWN ON SI SUBSTRATE
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机译:在si衬底上生长的gaas薄膜的制备方法及在si衬底上生长的gaas薄膜的制备方法
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摘要
Disclosed is a preparation method for a GaAs thin film grown on an Si substrate, said method comprising the following steps: (1) Si (111) substrate cleaning; (2) Si (111) substrate preprocessing; (3) Si (111) substrate oxide film removal; (4) first InxGa1-xAs buffer layer growth; (5) first InxGa1-xAs buffer layer in situ annealing; (6) GaAs buffer layer growth; (7) GaAs buffer layer in situ annealing; (8) second InxGa1-xAs buffer layer growth; (9) second InxGa1-xAs buffer layer in situ annealing; (10) GaAs epitaxial thin film growth. Also disclosed is a GaAs thin film grown on an Si substrate. The GaAs thin film obtained by the present invention has a good crystal quality, an even surface, and a positive promotional significance with regard to the preparation of semiconductor devices, particularly in the field of solar cells.
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机译:公开了一种在Si衬底上生长的GaAs薄膜的制备方法,所述方法包括以下步骤:(1)清洗Si(111)衬底; (2)Si(111)基板的预处理; (3)去除Si(111)衬底的氧化膜; (4)首先在In x Sub> Ga 1-x Sub> As缓冲层中生长; (5)首先在In x Sub> Ga 1-x Sub> As缓冲层中进行原位退火; (6)GaAs缓冲层的生长; (7)GaAs缓冲层原位退火; (8)第二In x Sub> Ga 1-x Sub>作为缓冲层的生长; (9)第二In x Sub> Ga 1-x Sub> As缓冲层原位退火; (10)GaAs外延薄膜的生长。还公开了在Si衬底上生长的GaAs薄膜。对于半导体器件的制备,特别是在太阳能电池领域中,通过本发明获得的GaAs薄膜具有良好的晶体质量,平坦的表面和积极的促进意义。
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