Optical properties of InGaN based multiple quantum wells on low threading dislocation density GaN films fabricated by air-bridged lateral epitaxial growth

摘要

We have systematically studied radiative and nonradiative recombination processes by time-resolved pho-toluminescence (TR-PL) measurements in InGaN based multiple quantum wells (MQWs) with various In content or Si doping conditions of barrier layers on low-threading dislocaton (TD) density GaN films fabricated by air-bridged lateral epitaxial growth (ABLEG). Temperature dependences of PL decay times and PL intensities indicate that the localization of photo-excited carriers and the nonradiative recombination process are suppressed by using Si-doped InGaN barriers in InGaN based MQWs on low TD density ABLEG-GaN films.