Influence of Sb surfactant on the structural and optical properties of InGaAsN/GaAs multi-quantum wells grown by metalorganic chemical vapor deposition

摘要

The influence of antimony (Sb) as a surfactant on the structure and optical properties of InGaAsN/GaAs multi-quantum wells (MQWs) grown by metalorganic chemical vapor deposition (MOCVD) is studied. It was found that the photoluminescence (PL) peak intensity of as-grown MQWs increases strongly with introduction time of excess Sb flux during the growth interruption process. It seems to be due to the improvement of structure properties at the interface by a surfactant suppressing the surface diffusion phenomenon. After the annealing process, the PL intensity shows a strong dependence on Sb introduction time and annealing temperature. The PL peak wavelength is blue-shifted with increasing annealing temperature for all samples.