Charge-based modeling of channel material-engineered P-type double gate MOSFET

摘要

A physics-based, charge-based model for P-type Gaussian doped DG MOSFET is presented in this work. The developed model is also applicable to the investigation of the impact of channel material on the performance of p-type DG MOSFET. The reliability issues of the p-type MOSFET have also been demonstrated using both developed analytical model and simulated results. The performance degradation due to unwanted interface trap density in both p-type and n-type DG MOSFET are also compared in this work. In addition to this, the impact of the straggle range of Gaussian doping on the performance of silicon (Si)- and germanium (Ge)-based DG MOSFET (in terms of threshold voltage, DIBL and I/I ratio) has also been investigated and compared.