Impact of Unintentional Discrete Charges in a Nominally Undoped Channel of a Thin Body Double Gate MOSFET: Classical to Full Quantum Simulation

摘要

A comparison of full quantum device simulation with semi-classical methods is made for an unintended single atomistic dopant at various locations in a 10 nm double gate MOSFET transistor. The density gradient method comes closest to the non-equilibrium Green function results for fails seriously when the unwanted charge is located well-within the channel.