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A high accuracy bandgap reference with chopped modulator to compensate MOSFET mismatch

机译:具有斩波调制器的高精度带隙基准,可补偿MOSFET的失配

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A design of a low voltage bandgap reference (BGR), for SOC application with high accuracy, is described and the chip layout is presented. To compensate the error caused by the current-mirror mismatch, the chopper modulator is used in the BGR to decrease the offset of the opamp. The design features a reference voltage of 0.256V/spl sim/0.768V with supply voltage range from 1 V to 1.5 V and temperature range from -20 /spl deg/C to 60 /spl deg/C. The maximum supply current is 4 /spl mu/A and the area of layout is 0.3 /spl times/ 0.4 mm/sup 2/ with a standard 0.25 /spl mu/m 2P5M n-well CMOS process.
机译:描述了一种用于高精度SOC应用的低压带隙基准(BGR)设计,并给出了芯片布局。为了补偿由电流镜失配引起的误差,在BGR中使用了斩波调制器以减小运算放大器的失调。该设计的参考电压为0.256V / spl sim / 0.768V,电源电压范围为1 V至1.5 V,温度范围为-20 / spl deg / C至60 / spl deg / C。最大电源电流为4 / spl mu / A,布局面积为0.3 / spl倍/ 0.4 mm / sup 2 /,采用标准0.25 / spl mu / m 2P5M n阱CMOS工艺。

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