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A Chopper-Buffered Mutually Compensated Mobility and Threshold CMOS Voltage Reference

机译：斩波器缓冲的相互补偿的迁移率和阈值CMOS电压基准

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作者
Uy, Wes;
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作者单位

Tufts University;

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授予单位 Tufts University;
学科
学位 M.S.
年度 2013
页码 122 p.
总页数 122
原文格式 PDF
正文语种 eng
中图分类
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专利

1. Mutual compensation of mobility and threshold voltage temperatureeffects with applications in CMOS circuits [J] . Filanovsky I.M., Allam A. IEEE Transactions on Circuits and Systems. I, Regular Papers . 2001,第7期

机译：迁移率和阈值电压温度效应的相互补偿及其在CMOS电路中的应用
2. A sub-1 V nanopower temperature-compensated sub-threshold CMOS voltage reference with 0.065%/V line sensitivity [J] . Luca Magnelli, Felice Crupi, Pasquale Corsonello, International journal of circuit theory and applications . 2015,第4期

机译：低于1 V的纳瓦级温度补偿的亚阈值CMOS电压基准，线路灵敏度为0.065％/ V
3. Sub-1 V band-gap based and MOS threshold-voltage based voltage references in 0.13 A mu m CMOS [J] . Colombo Dalton Martini, Wirth Gilson, Bampi Sergio Analog Integrated Circuits and Signal Processing . 2015,第1期

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4. A low voltage CMOS voltage reference based on partial compensation of MOSFET threshold voltage and mobility using current subtraction [C] . Toledo Luis Eduardo, Petrashin Pablo A., Lancioni Walter J., 2013 IEEE Fourth Latin American Symposium on Circuits and Systems . 2013

机译：一种基于MOSFET阈值电压和迁移率的部分补偿（使用电流减法）的低压CMOS电压基准
5. A Radiation Hardened Mutually Compensated Mobility and Threshold Voltage Reference Approach. [D] . Nugent, Brian. 2012

机译：辐射硬化的相互补偿迁移率和阈值电压参考方法。
6. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference [O] . El Hafed Boufouss, Laurent A. Francis, Valeriya Kilchytska, 2013

机译：超低功率高温和辐射硬互补金属氧化物半导体（CMOS）绝缘体上硅（SOI）电压基准
7. A sub-1 v nanopower temperature-compensated sub-threshold CMOS voltage reference with 0.065%/V line sensitivity [O] . Magnelli, Luca, Crupi, Felice, Corsonello, Pasquale, 2015

机译：低于1v的纳瓦级温度补偿的亚阈值CMOS电压基准，线路灵敏度为0.065％/ V

A Chopper-Buffered Mutually Compensated Mobility and Threshold CMOS Voltage Reference

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