Strain relaxation in strained-Si Layer on SiGe-on-insulator substrate

摘要

Strained SOI-MOSFETs are promising device structures for high-performance CMOS applications, because of their high current drive and low parasitic capacitances. It has been demonstrated that uniform 150 and 200mm strained-Si/SGOI (SiGe-on-insulator) wafers with the ULSI grade have been successfully fabricated by the Ge condensation process to realize excellent device performances even for 35nm-gate-length MOSFETs. On the other hand, subthreshold characteristics of MOSFETs on the strained-SOI wafers were occasionally deteriorated by the presence of misfit dislocations at the Si/SiGe interface. The critical thickness, h/sub c/ of strained-Si on SiGe alloy, therefore, is one of the most important parameters for strained-Si technologies. However, this thickness has not been well characterized yet. Our previous work confirmed that 90/spl deg/ partial dislocation glides and stacking faults are introduced into strained-Si layers during the mismatched growth of the tensile layers on [001] SGOI substrates. In this work, in order to determine the h/sub c/ of strained-Si layers and to examine the strain relaxation mechanism, a formation of misfit dislocations and dislocation morphology have been investigated for a wide range of the SiGe alloy compositions and strained-Si layer thicknesses. The strain relaxation occurs first through a formation of the misfit dislocation of 90/spl deg/ Shockley partials and sluggishly proceeds via a formation of 60/spl deg/ perfect dislocations with increasing thicknesses of the highly tensile mismatched Si. Also, the classical kinetic model based on the Dodson and Tsao approach is found to provide partially successful agreement with the relaxation behavior and the values of h/sub c/, experimentally obtained in this work.