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Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning
Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning
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机译:通过衬底和外延层图案化来限制III型氮化物异质结构中的应变松弛
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摘要
A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III-nitride substrate or epilayer including each of the mesas with a dimension l along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a III-nitride layer deposited heteroepitaxially and coherently on a non-patterned surface of the substrate or epilayer.
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