Department of Semiconductor Science and Technology, Chonbuk National University, Duckjin-Dong, Duckjin-ku, Chonju 561-756, Korea;
direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, X-ray topography, etc.); scanning electron microscopy (SEM) (including EBIC); transmission electron microscopy (TEM) (including STEM, HRTEM, etc.); atomic f;
机译:通过III型源流率调制外延生长的具有无小丘光滑表面的N面GaN(000(1)over-bar)膜
机译:沿非极性方向生长的GaN层的TEM研究:横向过度生长和Pendeo外延层
机译:通过MOVPE进行GaN(0001)薄膜常规和外延外延生长期间的表面不稳定性和相关的粗糙度
机译:直接观察丘陵膜对丘陵薄膜的丘陵及甘草基层稳定性
机译:通过异质外延GaN薄膜中的缓冲层控制应力和缺陷
机译:通过HR-TEMXRD和慢正电子实验确定GaN / AlN / Si异质结构中GaN膜的缺陷结构
机译:通过LEED patterson反演直接观察GaN(0001)表面上的Ga层
机译:新开发的GaN pendeo外延层的优异结构质量