Magnetic freeze-out of electrons in InGaN/GaN multiple quantum wells

摘要

We study longitudinal electron transport in InGaN/GaN multiple quantum well (MQW) structures at moderate magnetic field. A step-wise behaviour in magnetic field dependences of both the Hall coefficient and the magnetoresistivity is explained by a magnetic induced localization of electrons in a two-dimensional (2D) potential relief due to the composition fluctuations in the wells. To describe the results we extend the model for a magnetic localization of electrons by treating every quantum well like a quasi-2D system with a cylindrical potential relief.