首页> 外文会议>Conference on Advances in Resist Technology and Processing XXI pt.2; 20040223-20040224; Santa Clara,CA; US >Airborne Contamination Control for 157-nm Lithography -Influence of Ammonia Contamination-
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Airborne Contamination Control for 157-nm Lithography -Influence of Ammonia Contamination-

机译:157 nm光刻的机载污染控制-氨污染的影响-

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The ammonia durability of the 157-nm lithography resists is still unclear due to the smaller target dimensions, thinner resist films, and variations in base polymer compared to those of 193-nm and 248-nm resists. It has not been determined what ammonia concentrations must be achieved in order to successfully process 157-nm resists. Until now, the ammonia durability of initial 157-nm resists during post exposure delay (FED) and during post coating delay (PCD) was compared to those of 193-nm and 248-nm resists. It was confirmed that all initial 157-nm resists had low ammonia durability. In this paper, the ammonia durability of newly developed 157-nm resists, that have improved transmittance and resolution, was evaluated during PED and PCD. Then, we found that the ammonia durability of these resists were not enough and that the ammonia concentration from exposure to development should be kept under 0.1 ppb. Thermal desorption spectroscopy results showed that resists with lower ammonia durability tended to have more amount of adsorbed ammonia than other resists. Furthermore, the ammonia durability of 157-nm resist couldn't be improved to the level of that of 193- and 248-nm resist by the adjustment amount of resist additives. Due to the low ammonia durability, it will be necessary to control the ammonia concentration below 0.1 ppb in processing equipment used in 157-nm lithography.
机译:与193nm和248nm抗蚀剂相比,由于目标尺寸较小,抗蚀剂膜更薄以及基础聚合物的变化,157nm光刻抗蚀剂的氨耐久性尚不清楚。尚未确定成功处理157 nm抗蚀剂必须达到什么氨浓度。到目前为止,将初始157 nm光刻胶在曝光延迟后(FED)和涂覆延迟(PCD)期间的氨耐久性与193 nm和248 nm光刻胶的氨耐久性进行了比较。可以确认所有最初的157 nm抗蚀剂的氨耐久性均较低。本文在PED和PCD期间评估了新开发的157 nm抗蚀剂的氨耐久性,该抗蚀剂具有改善的透射率和分辨率。然后,我们发现这些抗蚀剂的氨耐久性不足,并且暴露于显影的氨浓度应保持在0.1ppb以下。热脱附光谱结果表明,具有较低氨耐久性的抗蚀剂倾向于比其他抗蚀剂具有更多的氨吸附量。而且,通过调节抗蚀剂添加剂的量,不能将157nm抗蚀剂的氨耐久性提高到193nm和248nm抗蚀剂的水平。由于氨的耐久性较低,因此有必要在157 nm光刻中使用的处理设备中将氨浓度控制在0.1 ppb以下。

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