Dynamic characterization of the threshold voltage instability under the pulsed gate bias stress in 4H-SiC MOSFET

摘要

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. The threshold voltage (Vth) instability of 4H-SiC MOSFETs was investigated using high-speed IV measurement instrument. DC stress measurement of wide time span ranging from 10−6 to 103 s without relaxation effect was conducted. The high-speed measurement allowed of dynamic ΔVth measurement under pulsed AC gate bias stress. We investigated effects of NO POA in gate oxidation process on the Vth instabilities.