PLASMA CVD METHOD AND SEMICONDUCTOR DEVICE HAVING METAL FILM FORMED BY THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a plasma of forming a Ti or other metal film good in surface morphology with reduced residual halogen content and a high-reliability semiconductor device having a metal film formed thereby. ;SOLUTION: The plasma CVD is applied at a total pressure of a mixed gas contg. TiCl₄ or another metal halide and H₂, which is less than the point at which any of the emission strength ratios H β/H α, Hγ/Hα, Hδ/Hα of a hydrogen atom beam spectrum turns to decrease as the total pressure gradually increase. This allows a plasma condition rich in high-exciting energy hydrogen active species to be adopted and hence the formed metal film is uniformly adsorbed to a substrate being treated to result in forming of a flat and less- halogen-content metal film.;COPYRIGHT: (C)1997,JPO