X-ray lithography system and x-ray lithography method

摘要

An X-ray lithography system and an X-ray exposure method are provided which is able to perform distortion correction and magnification correction in pattern projection, by using an X-ray reflection mirror whose radius of curvature is changed so as to differentiate its reflection characteristic according to an in-plane incident position of an X-ray beam. More particularly, the X-ray lithography system comprises an X-ray reflection mirror driving unit connected to the X-ray reflection mirror, for changing a position of the X-ray beam incident into the X-ray reflection mirror, a relative positional information acquiring unit for acquiring relative positional information between a pattern on the X-ray mask and a pattern on the wafer as an exposed substrate during exposure, a two dimensional information acquiring unit for acquiring two dimensional information of the X-ray beam during exposure, and an X-ray reflection mirror controlling unit for feedback-controlling the X-ray reflection mirror driving unit in real time, based on the relative positional information and the two dimensional information during exposure by the X-ray beam. Thus, while feedback-controlling an incident position and an incident angle of the X-ray beam into the X-ray reflection mirror and relative positional relationship between the X-ray reflection mirror and the X- ray mask, exposure can be performed by setting a divergence angle or collimation of the X-ray beam to desired values on a surface of the X- ray mask. Accordingly, the mask pattern can be aligned and projected onto each exposure field on the wafer in which distortion is caused due to various manufacturing processes.