首页> 外国专利> SINGLE CRYSTAL TUNGSTEN OXIDE NANOTUBE, SINGLE CRYSTAL TUNGSTEN OXIDE NANOWIRE, AND METHOD FOR MANUFACTURING THEM

SINGLE CRYSTAL TUNGSTEN OXIDE NANOTUBE, SINGLE CRYSTAL TUNGSTEN OXIDE NANOWIRE, AND METHOD FOR MANUFACTURING THEM

机译:单晶钨纳米管,单晶钨纳米管及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide single crystal tungsten oxide nanotubes and single crystal tungsten oxide nanowires which are useful as functional materials used in displays for information-apparatuses, various sensors, recording devices, or the like; and to provide methods for manufacturing them.;SOLUTION: The single crystal tungsten oxide nanotubes, each being a tubular single crystal tungsten oxide having an outer diameter of 150-350 nm, an inner diameter of 50-150 nm and a length of ≥1 μm, are manufactured by heating a tungsten foil to 1,000-1,050°C and a tantalum wafer to 600-700°C, then keeping them at respective temperatures for 15-25 min under a pressure of ≤0.2 Torr, and further keeping them for 30-60 min after controlling the pressure to be ≤10 Torr. The single crystal tungsten oxide nanowires, each being a linear single crystal tungsten oxide having a diameter of 20-100 nm and a length of ≥1 μm, are manufactured by heating a tungsten foil to 1,000-1,050°C and a tantalum wafer to 600-700°C and keeping them at the respective temperatures for 50-80 min under a pressure of 8-15 Torr.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:提供单晶的氧化钨纳米管和单晶的氧化钨纳米线,它们用作信息设备的显示器,各种传感器,记录装置等中使用的功能材料;解决方案:单晶氧化钨纳米管,每个都是管状的单晶氧化钨,其外径为150-350 nm,内径为50-150 nm,长度为。通过将钨箔加热到1,000-1,050℃并将钽晶片加热到600-700℃,然后在0.2托的压力下将它们分别在各自的温度下保持15-25分钟,来制造1μm的金属,在将压力控制在10 Torr之后,再将其放置30-60分钟。通过将钨箔加热至1,000-1,050℃并在室温下加热,来制造单晶氧化钨纳米线,每条都是直径为20-100nm且长度为1μm的线性单晶氧化钨。钽晶片至600-700°C并在8-15 Torr的压力下在各自的温度下保持50-80分钟。;版权所有:(C)2005,JPO&NCIPI

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