FILM FORMATION DEVICE AND METHOD FOR FORMING A FILM OF A SILICON OXIDE FILM ON A TUNGSTEN FILM OR A TUNGSTEN OXIDE FILM APPLYING A SINGLE-TYPE FILM FORMATION APPARATUS

摘要

PURPOSE: A film formation device and a method for forming a film of a silicon oxide film on a tungsten film or a tungsten oxide film are provided to reduce incubation time of a silicon oxide film by forming a silicon oxide film on the tungsten film or the tungsten oxide film.;CONSTITUTION: A silicon substrate(1) is prepared. A tungsten film or a tungsten oxide film(2) is formed on the silicon substrate. An amino-silane based gas is provided to a surface of the tungsten film or the tungsten oxide film. A seed layer(3) is formed on the tungsten film or the tungsten oxide film. A silicon oxide film(4) is formed on the seed layer.;COPYRIGHT KIPO 2012