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Crystallographic anisotropy of the resistivity size effect in single crystal tungsten nanowires

机译:单晶钨纳米线中电阻率大小效应的晶体学各向异性

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摘要

This work demonstrates an anisotropic increase in resistivity with decreasing width in single crystal tungsten (W) nanowires having a height of 21 nm. Nanowire-widths were in the range of 15–451 nm, with the anisotropy observed for widths below 50 nm. The longitudinal directions of the nanowires coincided with the <100>, <110> and <111> orientations of the body centered cubic phase of W. The resistivity increase was observed to be minimized for the <111>-oriented single crystal nanowires, exhibiting a factor of two lower increase in resistivity at a width of ~15 nm, relative to the thin film resistivity (i.e., an infinitely wide wire). The observed anisotropy is attributed to crystallographic anisotropy of the Fermi velocity and the resultant anisotropy of the electron mean free path in W, and underscores the critical role of crystallographic orientation in nanoscale metallic conduction.
机译:这项工作表明高度为21 nm的单晶钨(W)纳米线的电阻率各向异性随着宽度的减小而增加。纳米线的宽度在15–451 nm范围内,对于低于50 nm的宽度观察到各向异性。纳米线的纵向与W的体心立方相的<100>,<110>和<111>方向重合。对于<111>取向的单晶纳米线,观察到电阻率的增加最小。相对于薄膜电阻率(即无限宽的导线),在约15 nm的宽度处电阻率的增加降低了两倍。观察到的各向异性归因于费米速度的晶体学各向异性和W中电子平均自由程的合成各向异性,并强调了晶体学取向在纳米级金属导电中的关键作用。

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