METHOD OF MANUFACTURING SINGLE-CRYSTAL GAN SUBSTRATE, AND SINGLE-CRYSTAL GAN SUBSTRATE

摘要

Manufacture at lower cost of off-axis GaN single-crystal freestanding substrates having a crystal orientation that is displaced from (0001) instead of (0001) exact. With an off-axis (111) GaAs wafer as a starting substrate, GaN is vapor-deposited onto the starting substrate, which grows GaN crystal that is inclined at the same off-axis angle and in the same direction as is the starting substrate. Misoriented freestanding GaN substrates may be manufactured, utilizing a misoriented (111) GaAs baseplate as a starting substrate, by forming onto the starting substrate a mask having a plurality of apertures, depositing through the mask a GaN single-crystal layer, and then removing the starting substrate. The manufacture of GaN crystal having a misorientation of 0.1° to 25° is made possible.