Tunable In-Plane Anisotropy in Amorphous Sm Co Films Grown on(011)-Oriented Single-Crystal Substrates

摘要

cqvip:Amorphous Sm-Co films with uniaxial in-plane anisotropy have great potential for application in information-storage media and spintronic materials.The most effective method to produce uniaxial inplane anisotropy is to apply an in-plane magnetic field during deposition.However,this method inevitably requires more complex equipment.Here,we report a new way to produce uniaxial in-plane anisotropy by growing amorphous Sm-Co films onto(011)-cut single-crystal substrates in the absence of an external magnetic field.The tunable anisotropy constant,kA,is demonstrated with variation in the lattice parameter of the substrates.A kA value as high as about 3.3×10^4J·m^-3 was obtained in the amorphous Sm-Co film grown on a LaAlO3(011)substrate.Detailed analysis indicated that the preferential seeding and growth of ferromagnetic(FM)domains caused by the anisotropic strain of the substrates,along with the formed Sm-Co,Co-Co directional pair ordering,exert a substantial effect.This work provides a new way to obtain in-plane anisotropy in amorphous Sm-Co films.