Reflection device for EUVL lithography, fabricating method of the same and, mask, projection optics system and apparatus of EUVL using the same

摘要

EUV lithography manufacturing method and a reflecting device for reflecting device is disclosed. ; The disclosed reflecting device is formed on a substrate, the substrate and extreme ultraviolet (EUV: Extreme Ultra Violet) comprises a multi-reflection layer made of a material capable of reflecting the line, multi-reflection layer, a first material layer and the first material a layer group including the second material and the surface treatment layer surface-treated with a film layer, formed on the surface treated film is formed by a plurality of stacked. ; The disclosed reflective device manufacturing method, comprising: preparing a substrate; Onto the substrate and extreme ultraviolet: multi-reflection layer of a material capable of reflecting (EUV Extreme Ultra Violet) line; the step of including a step of forming, the forming of the multiple reflection layer, forming a first material layer and .; The method comprising: the first material layer subjected to surface treatment; Forming a second material layer on the first material layer, the surface-treated; includes, again, wherein the forming the first layer of material on a second material layer, the first material layer surface treatment, the second forming material layer and the process is repeated a plurality of times to form the multi-reflection layer.