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EPITAXIAL GROWTH OF THIN SMOOTH GERMANIUM (Ge) ON SILICON (Si) UTILIZING AN INTERFACIAL SILICON GERMANIUM (SiGe) PULSE GROWTH METHOD
EPITAXIAL GROWTH OF THIN SMOOTH GERMANIUM (Ge) ON SILICON (Si) UTILIZING AN INTERFACIAL SILICON GERMANIUM (SiGe) PULSE GROWTH METHOD
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机译:利用界面硅锗(SiGe)脉冲生长法在硅(Si)上生长稀薄锗(Ge)
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摘要
Disclosed is a method of growing thin and smooth germanium (Ge) on a strained or relaxed silicon (Si) layer comprising the steps of: (a) treating surface of the strained or relaxed Si layer to gaseous precursors of both Si (e.g., silane) and Ge (e.g., germane) for a predetermined short time duration Δt, where 1≦Δt≦30 seconds; and (b) depositing a thin Ge film on top of said treated Si layer, wherein said treatment step of (a) reduces growth time and surface roughness of the thin Ge film (e.g., sub-5 nm or sub-20 nm thick) deposited on the Si layer. The treatment step (a) can be conducted at a steady predetermined temperature T, where 450≦T≦900° C. The predetermined short time duration Δt can be chosen such that less than 10 A of SiGe is deposited.
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