In InN to with respect to formation mannered null GaN buffer formation of the nitriding indium gallium (InGaN) epitaxial thin film which possesses

摘要

PROBLEM TO BE SOLVED: To provide a growth method useful and convenient for obtaining an InN epitaxial thin film that has excellent surface flatness, a perfect crystal structure, and an excellent optical characteristic.;SOLUTION: Prior to the epitaxial growth of an InN thin film on a GaN buffer layer, an In metal with a thickness of approximately one or two molecule layers (ML) is supplied to the GaN buffer layer surface while a plasma source of nitrogen is not supplied. The GaN buffer layer may also have an N polarity ((000-1) surface, -c surface). For a growth technology, a plasma generated from N2 gas may be used as a nitrogen atom supplying means, and atom beams generated by highly heating the In metal or Ga metal atoms in a crucible may also be used as a means for supplying Ga and In. (This is referred to as an RF-MBE method).;COPYRIGHT: (C)2008,JPO&INPIT