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Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
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机译:形成通过金属有机汽相外延(MOCVD)生长的氮化铟(InN)和氮化铟镓(InGaN)量子点
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摘要
Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1−xN/InyGa1−yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).
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机译:氮化铟(InN)和富铟氮化铟镓(InGaN)量子点嵌入单个和多个In x Sub> Ga 1&min; x Sub> N / In y <通过在MoCVD生长过程中使用TMIn和/或三乙基铟(TEIn),乙基二甲基铟(EDMIn)作为抗表面活性剂形成/ Sub> Ga 1&y; Sub y> N量子阱(QW),其中来自这些点的光致发光波长范围从480 nm到530 nm。 TMIn和/或其他铟前体的受控量与触发随后的氨和TMIn流动一样,对于触发无位错QD的形成至关重要。该方法可以容易地用于蓝色和绿色发光二极管(LED)的有源层的生长。
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