GROUP III/V NITRIDE SEMICONDUCTOR, PHOTOCATALYST SEMICONDUCTOR ELEMENT, PHOTOCATALYTIC REDOX REACTION APPARATUS, AND PHOTOELECTROCHEMICAL REACTION EXECUTION METHOD

摘要

Provided are a III/V group nitride semiconductor causing an oxidation-reduction reaction at a high photoconversion efficiency by irradiation of light, a photocatalytic semiconductor device, a photocatalytic oxidation-reduction reaction apparatus, and an execution process of a photoelectrochemical reaction.;In the III/V group nitride semiconductor, the full width at half maximum of an X-ray rocking curve on a catalytic reaction surface thereof is 400 arcsec or less, and a carrier density in a surface layer portion having the catalytic reaction surface is 1.5 x 1016 cm-3 or more, but 3.0 x 1018 cm-3 or less. The photocatalytic semiconductor device has the III/V group nitride semiconductor laminated on a substrate. In the photocatalytic oxidation-reduction reaction apparatus, one electrode of a pair of electrodes for electrolysis, which are electrically connected to each other in a state brought into contact with an electrolyte, is composed of the III/V group nitride semiconductor, and a catalytic reaction surface making up the III/V group nitride semiconductor is irradiated with light, thereby causing an oxidation reaction or reduction reaction on the catalytic reaction surface.