Photoelectrochemical Reactions and Hydrogen Evolution of III-Nitride Semiconductors

摘要

Photoelectrochemical properties of visible light absorption, hydrogen evolution at zero bias, and stability of working electrode for III-nitrides were demonstrated. Photoassist hydrogen evolution from Pt counterelectrode was observed using n-type InxGa1?xN with 408 nm band-edge emission at room temperature. Hydrogen evolution was achieved without bias using crystallographic and electric optimized n-type GaN. Over 5 h operation of the photoelectrochemical reaction using n-type GaN was revealed. Details of these properties are discussed.