Method for manufacturing complementary metal-oxide-semiconductor transistor of integrated circuit, involves subjecting silicon-germanium layer to epitaxy process to form silicon layer, and oxidizing silicon layer using oxidation process

摘要

The method involves forming a silicon-germanium layer (21) on a silicon substrate (22), and subjecting the silicon-germanium layer to an epitaxy process to form a thin silicon layer (24), where thicknesses of the silicon-germanium layer and the thin silicon layer are 4-20 nanometer and 3-10 nanometer, respectively. The thin silicon layer is oxidized using a thermal oxidation process, where the thin silicon layer and the silicon-germanium layer are formed from a hollow part of the silicon substrate. An insulation layer is formed with strong dielectric permittivity.