High efficiency nonpolar InGaN/GaN light-emitting diodes(LEDs) and method for manufacturing the same

摘要

PURPOSE: A high efficiency non-polarized gallium-nitride-based light emitting device and a manufacturing method thereof are provided to improve carrier injection efficiency by arranging a cladding layer on the top and bottom of an active layer. CONSTITUTION: A first cladding layer(331) is formed on a first nitride semiconductor layer. An active layer(330) is formed on the first cladding layer. A second cladding layer is formed on the active layer. A second nitride semiconductor layer is formed on the second cladding layer. The first cladding layer and the second cladding layer are doped with pre-set impurities. The active layer comprises a structure in which a quantum well layer and a quantum barrier layer are alternately formed. [Reference numerals] (300) Substrate; (310) Buffer layer; (330) Active layer; (360) Transparent conductive electrode