The staggered InGaN quantum well (QW) structure and the conventional InGaN QW structure for the emission at a particu-lar wavelength of 400 nm are designed and theoretically investigated,including the distribution of the carriers’ concentration,the radiative recombination rate,the Shockley-Read-Hall (SRH) recombination rate as well as the output performance and the internal quantum efficiency. The theoretical result indicates that the staggered QW structure offers significant improve-ment of carriers’ concentration in the QW,especially the hole concentration. The output power and the internal quantum efficiency also show 32.6 % and 32.5 % enhancement,respectively,in comparison with that of the conventional InGaN QW structure. The reduction of the electron overflow can be the main factor for the improvement of the optical perfor-mance for novel staggered InGaN QW structure.
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