首页> 外国专利> THREE-DIMENSIONAL CROSSBAR ARRAY SYSTEMS AND METHODS FOR WRITING INFORMATION TO AND READING INFORMATION STORED IN THREE-DIMENSIONAL CROSSBAR ARRAY JUNCTIONS

THREE-DIMENSIONAL CROSSBAR ARRAY SYSTEMS AND METHODS FOR WRITING INFORMATION TO AND READING INFORMATION STORED IN THREE-DIMENSIONAL CROSSBAR ARRAY JUNCTIONS

机译:三维横梁阵列系统和用于将信息写入和读取三维横梁阵列连接中存储的信息的方法

摘要

The various embodiments of the present invention relates to a three-dimensional crossbar array (500, 1000). In an aspect of the present invention, three-dimensional crossbar array 1000 includes a plurality of crossbar arrays (1102-1104), the first de-multiplexer 1106, and a second demultiplexer (1108) and third de-multiplexer 1110. Each crossbar array nano wires of the first layer (702-704), the nano-wires of the second layer overlying the nanowires of the first layer (706-708), and overlaying the first nanowire of the second layer include nanowires of (710-712) a three-layer. A first de-multiplexer is configured to address nanowires within the nanowire of the first layer of each crossbar array, a second de-multiplexer is configured to address nanowires within the nanowire of the second layer of each crossbar array, and second The three de-multiplexer is configured to supply a signal to the nanowire in the nanowire in the third layer of each crossbar array.
机译:本发明的各种实施例涉及三维交叉开关阵列(500、1000)。在本发明的一方面,三维交叉开关阵列1000包括多个交叉开关阵列(1102-1104),第一解复用器1106以及第二解复用器(1108)和第三解复用器1110。每个交叉开关阵列。第一层(702-704)的纳米线,第二层的纳米线覆盖第一层(706-708)的纳米线并覆盖第二层的第一纳米线包括(710-712)的纳米线三层。第一解复用器被配置为寻址每个交叉开关阵列的第一层的纳米线内的纳米线,第二解复用器被配置为寻址每个交叉开关阵列的第二层的纳米线内的纳米线,第二个多路复用器被配置为向每个交叉开关阵列的第三层中的纳米线中的纳米线提供信号。

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