首页> 外国专利> THREE-DIMENSIONAL CROSSBAR ARRAY SYSTEMS AND METHODS FOR WRITING INFORMATION TO AND READING INFORMATION STORED IN THREE-DIMENSIONAL CROSBAR ARRAY JUNCTIONS

THREE-DIMENSIONAL CROSSBAR ARRAY SYSTEMS AND METHODS FOR WRITING INFORMATION TO AND READING INFORMATION STORED IN THREE-DIMENSIONAL CROSBAR ARRAY JUNCTIONS

机译:三维横梁阵列系统和方法,用于将信息写入和读取三维十字形阵列连接中存储的信息

摘要

Various embodiments of the present invention are directed to three-dimensionall crossbar arrays (500, 1000). In one aspect of the present invention, a three-dimensional crossbar array (1000) includes a plurality of crossbar arrays (1102-1104), a first demultiplexer (1106), a second demultiplexer (1108), and a third demultiplexer (1110). Each crossbar array includes a first layer of nanowires (702-704), a second layer of nanowires (706-708) overlaying the first layer of nanowires, and a third layer of nanowires (710-712) overlaying the second layer of nanowires. The first demultiplexer is configured to address nanowires in the first layer of nanowires of each crossbar array, the second demultiplexer is configured to address nanowires in the second layer of nanowires of each crossbar array, and the third demultiplexer is configured to supply a signal to the nanowires in the third layer of nanowires of each crossbar array.;COPYRIGHT KIPO & WIPO 2010
机译:本发明的各种实施例针对三维交叉开关阵列(500、1000)。在本发明的一个方面,三维交叉开关阵列(1000)包括多个交叉开关阵列(1102-1104),第一解复用器(1106),第二解复用器(1108)和第三解复用器(1110)。 。每个交叉开关阵列包括第一层纳米线(702-704),第二层纳米线(706-708)覆盖第一层纳米线,以及第三层纳米线(710-712)覆盖第二层纳米线。第一解复用器被配置为寻址每个交叉开关阵列的纳米线的第一层中的纳米线,第二解复用器被配置为寻址每个交叉开关阵列的纳米线的第二层中的纳米线,并且第三解复用器被配置为向所述交叉开关阵列提供信号。每个交叉开关阵列的第三层纳米线中的纳米线。版权所有KIPO和WIPO 2010

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