Analysis of Partial Bias Schemes for the Writing of Crossbar Memory Arrays

摘要

Partial bias schemes reduce the disturbance during the writing of crossbar arrays (CBAs). Detailed analysis of two partial bias schemes is presented in this paper: 1) 1/2 bias scheme for low-power operation and 2) 1/3 bias scheme for high-performance (i.e., high operation. With partial bias schemes, a sneak leakage reversal phenomenon may occur due to line-resistance-induced voltage degradation, which provides a measure of voltage driving range along access lines. Voltage dividing effect of selector devices reduces disturbance in CBAs and leads to similar writing voltage margin in both bias schemes. Matching a proper partial bias scheme with the selector device choice optimizes the performance of CBAs.