Switchable Cu2O/WOx p-n junction for high density crossbar arrays

摘要

A three-dimensional (3D) stackable memory device including scaled crossbar arrays is an ideal architecture for the realization of high-density information storage. However, a so-called sneak path (or crosstalk) issue affecting the read operation in crossbar arrays is still a major problem. Therefore, a suitable switch device is required to facilitate progress in the applications of crossbar arrays. Here, a device with a Pt/Cu2O/WOx/FTO staked structure is reported. The Cu2O/WOx p-n junction shows switchable characteristics for crossbar memory arrays. It is noteworthy that the different storage states can be distinguished in a particular way and the crosstalk effect is depressed. A soft-breakdown effect and conductive path model are also proposed to explain the resistive switching mechanism. The experimental results are further extended to prove the profound functionality of integrated oxide based resistive switching elements working as storage nodes.