首页>
外国专利>
TRANSISTORS HAVING ON-CHIP INTEGRATED PHOTON SOURCE OR PHOTONIC-OHMIC DRAIN TO FACILITATE DE-TRAPPING ELECTRONS TRAPPED IN DEEP TRAPS OF TRANSISTORS
TRANSISTORS HAVING ON-CHIP INTEGRATED PHOTON SOURCE OR PHOTONIC-OHMIC DRAIN TO FACILITATE DE-TRAPPING ELECTRONS TRAPPED IN DEEP TRAPS OF TRANSISTORS
展开▼
机译:晶体管具有片上集成的光子源或光子欧姆流失,以帮助深陷于晶体管陷阱中的去电子
展开▼
页面导航
摘要
著录项
相似文献
摘要
Techniques are provided that pumping of deep traps in GaN electronic devices using photons from an on-chip photon source. In various embodiments, a method for optical pumping of deep traps in GaN HEMTs is provided using an on-chip integrated photon source that is configured to generate photons during operation of the HEMT. In an aspect, the on-chip photon source is a SoH-LED. In various additional embodiments, an integration scheme is provided that integrates the photon source into the drain electrode of a HEMT, thereby converting the conventional HEMT with an ohmic drain to a transistor with hybrid photonic-ohmic drain (POD), a POD transistor or PODFET for short.
展开▼