Photon emission and current-collapse suppression of AIGaN/GaN field-effect transistors with photonic-ohmic drain at high temperatures

摘要

The high-temperature performances of AlGaN/GaN photonic-ohmic drain field-effect transistors (PODFETs) were evaluated by investigating the photon-emission behaviors of the photonic drain (P-D) and the dynamic characteristics at various temperatures. The P-D exhibited a robust photon-emission capability at high operating temperatures. Dynamic high-speed hard-switching tests revealed the effectiveness of the P-D and its photon-pumping functionality at deep electron traps to suppress the current collapse for AlGaN/GaN power transistors from room temperature to 200 degrees C. The results indicate the potential of AlGaN/GaN PODFETs for high-temperature power-switching applications. (C) 2018 The Japan Society of Applied Physics