首页> 外国专利> A method for producing a zinc oxide (ZnO) based single crystal, a ZnO based thin film and a ZnO based single crystalline thin film, and a ZnO based single crystal thin film and a ZnO based material comprising the ZnO based single crystalline thin film

A method for producing a zinc oxide (ZnO) based single crystal, a ZnO based thin film and a ZnO based single crystalline thin film, and a ZnO based single crystal thin film and a ZnO based material comprising the ZnO based single crystalline thin film

机译:氧化锌(ZnO)基单晶的制造方法,ZnO基薄膜和ZnO基单晶薄膜,以及ZnO基单晶薄膜和包含该ZnO基单晶薄膜的ZnO基材料

摘要

PROBLEM TO BE SOLVED: To provide: (1) a method for controlling a shape of a zinc oxide (ZnO)-based single crystal nanostructure;(2) a method for producing a highly oriented ZnO-based single crystal nanostructure, derived from the shape control technique; and (3) a technique for producing a ZnO-based thin film and ZnO-based single crystal thin film using the techniques.SOLUTION: A method for producing a zinc oxide (ZnO)-based single crystal nanostructure includes: a step of forming a zinc oxide (ZnO)-based thin film on a substrate; a step of subjecting the ZnO-based thin film to heat treatment in a reduced atmosphere; and a shape control step for a ZnO-based single crystal nanostructure obtained through the heat treatment step. The shape control step includes: a reheat treatment step including a step of further subjecting the ZnO-based single crystal nanostructure obtained through the heat treatment step to heat treatment in an atmosphere or a temperature condition different from those in the heat treatment; and/or a step of allowing the ZnO-based single crystal nanostructure obtained through the heat treatment step to be regrown, using a chemical vapor deposition method.
机译:要解决的问题:提供:(1)控制基于氧化锌(ZnO)的单晶纳米结构的形状的方法;(2)用于制备高度取向的基于ZnO的单晶纳米结构的方法。形状控制技术; (3)一种使用该技术制造ZnO基薄膜和ZnO基单晶薄膜的技术。解决方案:一种用于制造氧化锌(ZnO)基单晶纳米结构的方法包括:基板上的基于氧化锌(ZnO)的薄膜;在还原气氛下对ZnO基薄膜进行热处理的步骤;通过热处理步骤获得的基于ZnO的单晶纳米结构的形状控制步骤。形状控制步骤包括:再热处理步骤,其包括使通过热处理步骤获得的ZnO基单晶纳米结构进一步在不同于热处理的气氛或温度条件下进行热处理的步骤;和/或使用化学气相沉积法使通过热处理步骤获得的基于ZnO的单晶纳米结构再生的步骤。

著录项

  • 公开/公告号JP6150371B2

    专利类型

  • 公开/公告日2017-06-21

    原文格式PDF

  • 申请/专利权人 高知県公立大学法人;

    申请/专利号JP20120125420

  • 发明设计人 李 朝陽;川原村 敏幸;王 大鵬;

    申请日2012-05-31

  • 分类号H01L21/363;H01L21/365;C30B29/66;C30B29/16;C30B25/20;C23C16/40;C23C14/08;

  • 国家 JP

  • 入库时间 2022-08-21 13:55:44

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