DOPANT-FREE ALGAN-BASED ULTRAVIOLET LIGHT EMITTING DIODE AND PREPARATION METHOD THEREOF
展开▼
机译:基于无掺杂剂的基于Algan的紫外发光二极管及其制备方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention provides a dopant-free AlGaN-based ultraviolet (UV) light emitting diode (LED) and preparation method thereof. The dopant-free AlGaN-based UV LED comprises: a substrate (1); a dopant-free n-type layer (2) deposited on the substrate (1); an active area (3) deposited on the dopant-free n-type layer (2); and a dopant-free p-type layer (4) deposited on the active area (3). The dopant-free AlGaN-based UV LED does not adopt any dopant, increasing material quality of transistor and simplifying steps of growing layers to form the material.
展开▼