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Method for manufacturing vertical type light emitting diode, vertical type light emitting diode, method for manufacturing ultraviolet ray light emitting diode, and ultraviolet ray light emitting diode
Method for manufacturing vertical type light emitting diode, vertical type light emitting diode, method for manufacturing ultraviolet ray light emitting diode, and ultraviolet ray light emitting diode
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机译:垂直型发光二极管的制造方法,垂直型发光二极管,紫外线发光二极管的制造方法以及紫外线发光二极管
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摘要
A vertical type light emitting diode includes a nitride semiconductor having a p-n conjunction structure with a transparent material layer formed on a p type clad layer, the transparent material layer having a refractive index different from that of the p type clad layer and having a pattern structure of mesh, punched plate, or one-dimensional grid form, etc. A reflective metal electrode layer is formed on the transparent material layer as a p-electrode. A stereoscopic pattern is formed in the transparent material layer and the p-electrode deposited, and thereby forming the pattern in the p-electrode. Depositing the p-electrode on only 10 to 70% of the upper portion of the p type clad layer in an ultraviolet ray light emitting diode such that an area where the p type clad layer is exposed is wide increases the transmittance of ultraviolet rays through an area where the p-electrode is not deposited.
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