EXTREME ULTRAVIOLET MASK BLANK, PHOTO-MASK MANUFACTURED BY USING EXTREME ULTRAVIOLET MASK BLANK, LITHOGRAPHY APPARATUS USING PHOTO-MASK AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING PHOTO-MASK

摘要

The present invention relates to an extreme ultraviolet mask blank comprising a hydrogen absorber layer capable of storing hydrogen. The extreme ultraviolet mask blank comprises: a substrate including a first side and a second side facing each other; a reflective layer including a first reflective film and a second reflective film alternately stacked on a first surface of the substrate; a capping layer on the reflective layer; and a hydrogen absorber layer storing hydrogen between the reflective layer and the capping layer and coming in contact with the capping layer.;COPYRIGHT KIPO 2019