REFLECTIVE PHOTO-MASK BLANK, REFLECTIVE PHOTO-MASK AND EXPOSURE METHOD FOR EXTREME ULTRAVIOLET RAY

摘要

PROBLEM TO BE SOLVED: To provide a reflective photo-mask transferring a pattern having a high accuracy because a reflection contrast in the wavelength region of EUV is increased sufficiently, a reflectance in the wavelength of DUV is lowered sufficiently, and a pattern inspection is enabled with a high sensibility.;SOLUTION: A reflective photo-mask blank is composed of: a substrate; a multilayer reflecting film formed on the substrate; a buffer layer formed on the multilayer reflecting film; and an optical absorption layer formed on the buffer layer. A layer containing at least one kind of an element of zirconium, niobium, and silicon; and oxygen are formed to the buffer layer. The layer containing indium, oxygen and fluorine is formed for the optical absorption layer.;COPYRIGHT: (C)2008,JPO&INPIT