CVD-SiC Limited ring for semiconductor plasma etching process using CVD-SiC material

摘要

The present invention relates to a confinement ring for a semiconductor plasma etching process and, more specifically, to a confinement ring (10) for a semiconductor plasma etching process configured within the chamber of an etching apparatus, wherein the confinement ring (10) has a circular shape using a CVD-SiC material, forms a central portion penetrated in a vertical direction, and forms multiple rectangular slots (11) at an edge of a lower part to be spaced apart at regular intervals wherein each width gets gradually wider as it goes from an upper part toward a lower part, and Quartz ring (20) is configured to have a hole (21) bigger than the slot (11) while corresponding to the slot (11) on the lower side of the confinement ring (10), thereby being uniformly formed using the CVD-SiC to have a lifespan more than twice that of a conventional confinement ring and to enhance economic efficiency through cost saving, and being capable of minimizing a plasma gas diffusion efficiency lowering problem of conventional confinement rings and failures in the etching process by rapidly discharging particles and plasma gas.