Frontal Attack on Limiting Defects in GaN

摘要

GaN community, particularly under the leadership of Drs. Wood, Win, and Litton, recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood. This is a first and an important step, which must be followed by defect reduction before full implementation of this material and its allied binaries/ternaries in devices. To establish benchmarks and identify the basic issues involved, a group of experts have joined forces to first fully characterize the HVPE grown material followed by attempts to find ways to reduce the defects an impurities in GaN in the outlying years. The group consisted of R. Molnar of Lincoln Labs, Dave Look of Wright State University, Jaime Freitas of NRL, Chris Van de Walle of Xerox PARC, L. Chemyak of UCF, Fred Pollak of Brooklyn College, Zuzanna Lilliental Weber of LBNL, K. Saarinen of Helsinki University of Technology, L. Brillson of OSU, and Hadis Morkoc of VCU. There were others who performed related research, but their work is not included here.