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首页> 外文期刊>Smart Materials & Structures >Modeling and inverse compensation of hysteresis in vanadium dioxide using an extended generalized Prandtl-Ishlinskii model
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Modeling and inverse compensation of hysteresis in vanadium dioxide using an extended generalized Prandtl-Ishlinskii model

机译:使用扩展的广义Prandtl-Ishlinskii模型对二氧化钒中的磁滞进行建模和逆补偿

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摘要

Vanadium dioxide (VO2), a promising multifunctional smart material, has shown strong promise in microactuation, memory, and optical applications. During thermally induced insulator-to-metal phase transition of VO2, the changes of its electrical, mechanical, and optical properties demonstrate pronounced, complex hysteresis with respect to the temperature, which presents a challenge in the utilization of this material. In this paper, an extended generalized Prandtl-Ishlinskii model is proposed to model the hysteresis in VO2, where a nonlinear memoryless function is introduced to improve its modeling capability. A novel inverse compensation algorithm for this hysteresis model is developed based on fixed-point iteration with which the convergence conditions of the algorithm are derived. The proposed approach is shown to be effective for modeling and compensating the asymmetric and non-monotonic hysteresis with saturation between the curvature output and the temperature input of a VO2-coated microactuator, as well as the asymmetric hysteresis with partial saturation between the resistance output and the temperature input of a VO2 film.
机译:二氧化钒(VO2)是一种有前途的多功能智能材料,在微驱动,存储器和光学应用中显示出了强大的前景。在VO2的热诱导绝缘体到金属的相变过程中,其电,机械和光学性质的变化表现出相对于温度的明显复杂的磁滞现象,这在使用这种材料方面提出了挑战。本文提出了扩展的广义Prandtl-Ishlinskii模型来对VO2中的磁滞进行建模,其中引入了非线性无记忆功能以提高其建模能力。在定点迭代的基础上,针对该磁滞模型开发了一种新颖的逆补偿算法,推导了该算法的收敛条件。结果表明,所提出的方法对于建模和补偿具有VO 2涂层的微致动器的曲率输出和温度输入之间具有饱和的不对称和非单调磁滞,以及电阻输出和输出之间具有部分饱和的不对称磁滞是有效的。 VO2薄膜的温度输入。

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