Influence of Gate-to-source and Gate-to-drain Recesses on GaAs Camel-like Gate Field-effect Transistors~1

摘要

In this article, the characteristics of the GaAs homojunction camel-like gate field-effect transis- tors with and without the gate-to-source and gate-to-drain recesses structures are first investigated and com- pared. As to the device without the recesses structure, a second channel within the n~+-GaAs cap layer is formed at large gate bias, which could enhance the drain output current and transconductance. Furthermore, a two-stage relationship between drain current (and transconductance) versus gate voltage is observed in the recesses structure. The simulated results exhibit a maximum drain saturation current of 447 (351 mA/mm) and a maximum transconductance of 525 (148 mS/mm) in the studied device without (with) the recesses structure. Consequentially, the demonstration and comparison of the variable structures provide a promise for design in circuit applications.